The h v dependence of the photoemission current has been investigated in AlAl2O3Al tunnelling structures in the energy interval from 1 to 3.4 eV. The determination of the maximum barrier height φm from the Fowler plot seems to be the most exact method. From the sign reversal and extreme values of the photoemission currents the barrier heights have been determined, too; these additional possibilities will be discussed critically. The potential barrier profile has been obtained from a detailed analysis of the voltage dependence of φm. The influence of field penetration will be discussed. The Thomas-Fermi screening distance has been evaluated to S ≈ 0.5 Å.
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Korneffel et al. (1971) studied this question.
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