Au/Ti lateral tunnel diodes with interelectrode gaps less than 50 nm have been fabricated on Si 3 N 4 substrates using nanolithographical techniques. The fabricated devices were found to conduct by Fowler-Nordheim tunnelling both in high vacuum and at atmospheric pressure. The electrical characteristics of these devices showed that by using nanometre-size gaps between cathode and anode, vacuum microelectronic devices can be made to operate at ambient pressures much higher than those normally allowed at present.
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Wong et al. (1993) studied this question.
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