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A field effect transistor (FET) has been fabricated with the hexamer of thiophene (α‐sexithienyl) in order to assess the performance of such electronic devices based on an organic material. Particular emphasis has been given to the determination of the origin of the instability in the electrical performance. From this study it is confirmed that charged species, possibly chemical impurities present in the processed material, can migrate through the film under an applied electric field, even at room temperature.
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Ostoja et al. (1992) studied this question.
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