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An ultrashort lifetime of photocarriers as short as 600 fs has been obtained in ion-implanted Ge thin films grown on sapphire substrates. The photocarrier mobility determined by photoconductivity measurements is found to be reasonably high (∼100 cm2/V s). We have observed terahertz (THz) radiation from a photoconductive dipole antenna geometry.
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Sekine et al. (1996) studied this question.
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