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This paper reports a sealing process for reliable hermetic wafer-scale packaging among three wafers forming sandwich structure by glass frit. The process could be applied to Si, quartz crystal, SiC wafers and so on. The device wafer is bonded to the capping wafer in the first step and to another capping wafer forming vacuum-cavities in the second step. Experimental results indicate that the average bonding strength of packaging structure reached as high as 0.85kg/mm2 fulfilling MIL-STD-833E standard. The average leakage rate fits the standard of GJB-548A.This paper also realizes glass frit hermetic bonding in the case of Au/Cr and Pt/Ti film feed-through deposited on the device wafer.Experimental results indicate that Pt/Ti film feed-through hold up to bonding temperature cycling and avoid dissolution and adherence reduction compared with Au/Cr film feed-through
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Zhao et al. (2014) studied this question.