Profiles of sputter-deposited films using a mask were measured and compared to theoretical profiles. A discontinuity in the slope of the film profile is shown to be due to the finite thickness of the mask. Backscattering in rf sputter etching is shown to cause two effects: an apparent enhanced etching rate near the mask edge and nonvertical edges of the etched groove. Significant improvement in the etching profile was obtained by using slow-etching electrodes and low gas pressures.
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Sopori et al. (1977) studied this question.