Ion‐Implantation and Activation of Aluminum in 6 H  ‐ SiC

Ion implantation of large doses (>10 15 /cm 2 ) of Al into is known to produce excessive damage which cannot be readily eliminated by thermal annealing. We have demonstrated electrical activation of ion‐implanted Al in , using a relatively low total ion dose implanted at three energies (65, 135, and 220 keV) into a 2 μm epitaxial layer with a background p‐type doping level of . The implanted samples were annealed at temperatures from 1300 to 1500°C using a proximity annealing method to retard the decomposition of the surface at high temperatures. Upon annealing at 1450°C the sheet resistance of the implanted layer was reduced by approximately a factor of four relative to the same p‐type layer which was not implanted.