Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage (J-V) responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state J-V responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer, vn, is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.
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Price et al. (2010) studied this question.
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