Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 27, 1990Applied Physics Letters

Effect of confining layer aluminum composition on AlGaAs-GaAs-InGaAs strained-layer quantum well heterostructure lasers

View Full Paper
Ask AI
Bookmark
Share

Authors

PYP. K. YorkPrinceton UniversitySLS.M. LangsjoenWest Virginia UniversityLML. M. MillerNorthwestern University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

York et al. (1990) studied this question.

synapsesocial.com/papers/6a70926526770c2b8de09d86https://doi.org/10.1063/1.103408
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness1989 · 87 citations
  2. 2Extremely wide modulation bandwidth in a low threshold current strained quantum well laser1988 · 221 citations
  3. 3Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasers1986 · 93 citations
  4. 4Critical thickness in strained-layer GaInAs/GaAs quantum well lasers1989 · 9 citations
  5. 5Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor deposition1986 · 105 citations