The normal state resistance of Pb/Bi/In-oxide-Pb/Bi and Pb/Bi/In-oxide-Ag can be changed by applying sufficiently high voltage across the oxide barrier. To explain this effect we discuss an electrical dipole, a donor, a metal ion, and an oxygen migration model. The oxygen migration model best accounts for the experimental observations. Our investigations include telegraph noise measurements. A significant change in the low-frequency noise spectrum before and after electrical forming is found. It is possible to create and destroy two-level signals by applying an electric field on the order of 2.5×108 V/m.
No takes yet. Share an insight, caveat, or question.
Kohlstedt et al. (1993) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: