Resonant level lifetime in the double-barrier structure for both quasi-bound and extended states

The lifetime of resonant levels of the double-barrier structure is studied within a simple effective mass picture. Analytical results of the lifetime is presented for both quasi-bound and extended resonant states, taking into account the mass variation in well and barrier regions. Relevance of these results to carrier lifetime in multiquantum well infrared detectors is discussed. It is shown that the resonant level lifetime determines the up-limit of the lifetime of an electron injected into the excited state.