A crucible‐free technique for pulling single‐crystal cuprous oxide from the melt has been developed, involving the use of an arc‐image furnace to form a melt on the top of a cylindrical ingot of cuprous oxide. Single crystals approximately 1 cm in diameter and 3.5 cm long were grown along [111], [110], and [111] directions by the use of oriented seeds. The crystals were found to cleave preferentially along (111) planes. A count of chemical etch pits on (111) faces indicates a dislocation density of 10 4 to 10 5 cm −2 .
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Trivich et al. (1970) studied this question.