A new GaAs nanowire synthesis method is employed to produce a high yield of single‐crystalline wires. Reaction at 500 °C in supercritical hexane using gold seed particles results in wires that average 25 nm in diameter and tens of micrometers in length. The wires lend themselves to device fabrication (see Figure) allowing for electronic characterization.
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Davidson et al. (2004) studied this question.
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