Optical pulsed powers of 8 W from a single uncoated facet and low (<200 A/cm2) threshold current densities have been obtained from 3.1-mm-wide (cavity length=483 μm) nonplanar periodic quantum well heterostructure laser diode arrays grown by metalorganic chemical vapor deposition over a selectively etched corrugated substrate. The resulting nonplanar lateral active layer profile provides index guiding and suppresses lateral lasing regardless of device width.
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Givens et al. (1988) studied this question.