Proton-isolated narrow stripe visible laser grown by metalorganic chemical vapor deposition

Lasing characteristics were investigated on the narrow stripe visible laser grown by metalorganic chemical vapor deposition. The shortest emission wavelength achieved was 715 nm in pulsed operation. While the pulsed threshold current was essentially independent of the stripe width, the threshold current under cw operation increased with decreasing stripe width. The light-output power linearly increased without kinks up to 17 mW per facet for 760-nm devices with less than a 5-μm stripe. The differential quantum efficiency was as high as 70% and was independent both of the stripe width and of the emission wavelength. The beam pattern parallel to the junction plane was non-Gaussian with the full width at half-maximum power of 33°. Beam aspect ratio was less than 1.2.