An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity

An InGaAs-GaAs-AlGaAs strained layer quantum-well ring laser with a tetragonal cavity consisting of one symmetric and one asymmetric corner reflector both fabricated by reactive ion etching is described. Two beams emit from one facet with inclined angles predicted by Snell's Law. An increase of the threshold with incident angle is observed. Longitudinal mode behavior and L-I characteristics, which indicate the presence of strong competition between clockwise and counter-clockwise traveling waves, are described.>