Semiconductor behaviors of low loading multiwall carbon nanotube/poly(dimethylsiloxane) composites

We present a flexible electronic material fabricated by incorporating multiwall carbon nanotubes (MWNTs) into poly(dimethylsiloxane) rubber (0.35 wt % MWNT loading is most appropriate in our study). Resistance-temperature data for different composites (0.35–5 wt %) are analyzed within Coulomb gap variable range hopping model, which well explains the semiconductor behaviors in low MWNT loading composites. Field effect transistors fabricated using 0.35 wt % composite show a p-type behavior with a high effective mobility of 1.98 cm2 V s and linear transconductance 8.34×10−8 S at 2.5 V drain voltage. These results suggest an optional way of seeking for high-quality flexible electronic materials.