Ferroelectric properties and switching endurance of Hf0.5Zr0.5O₂ films on TiN bottom and TiN or RuO₂ top electrodes

Abstract magnified image The effect of the top electrode (TE) on the ferroelectric properties and switching endurance of thin Hf 0.5 Zr 0.5 O 2 films was examined. The TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitor can endure electric cycling up to 10 9 times, which is promising for the next‐generation memory. RuO 2 TE was reduced during annealing due to the reactive TiN bottom electrode, resulting in the degradation of the ferroelectric properties and endurance. In addition, the endurance of the TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitors was optimized by changing the film thickness and the postannealing temperature. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)