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Field-effect transistors based on a single SnO 2 nanowire were successfully fabricated, and their photon- and gas-sensing properties were investigated. It is found that the sensitivity of single SnO 2 nanowire based devices was remarkably improved by surface functionalization with ZnO or NiO nanoparticles. The heterojunction between the surface coating layers and SnO 2 and the corresponding coupling effect of the two sensing materials play a critical role in controlling device sensitivity.
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Kuang et al. (2008) studied this question.
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