Organic Ferroelectric‐Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half‐Selection Problem

Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF‐TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low‐cost and easy‐fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor in order to overcome the half‐selection problem. Unlike complicated manufacturing using multiple dielectrics, this system simplifies 1T1T FeRAM cell fabrication using one common dielectric. To achieve this goal, a strategy for semiconductor/insulator (S/I) interface modulation is put forward and applied to nonhysteretic selection transistors with high performances for driving or addressing purposes. As a result, high hole mobility of 3.81 cm 2 V −1 s −1 (average) for 2,6‐diphenylanthracene (DPA) and electron mobility of 0.124 cm 2 V −1 s −1 (average) for N , N ′‐1H,1H‐perfluorobutyl dicyanoperylenecarboxydiimide (PDI‐FCN 2 ) are obtained in selection transistors. In this work, we demonstrate this technology's potential for organic ferroelectric‐based pixelated memory module fabrication.