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A calculation is made of the anisotropy induced by an external stress on the dynamic effective charge of zincblende‐type semiconductors. This derivation is based on the semiempirical bondorbital model for the effective charge, and on the stress‐induced changes of the latter due to bond deformation and internal lattice displacements. Numerical application to specific materials shows that the effect can be significant. The results are in reasonable agreement with existing experimental information.
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Anastassakis et al. (1985) studied this question.
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