Identification of impurities in GaAs by the magneto-optical photoluminescent spectroscopy technique

Three residual donors (Si, S, Ge) and three residual acceptors (Ge, C, Zn) have been identified simultaneously in a p-type GaAs crystal. The donors were identified by the magneto-optical photoluminescent spectroscopy technique. The Si donor has also been identified by the same technique in a relatively heavily doped sample (∼5×1015 cm−3) of GaAs. A residual S donor has also been identified in still another Si-doped sample. These results demonstrate the versatility of the photoluminescence technique for materials characterization.