Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 ◦ Cf or 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 µ ma nd30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires. (Some figures in this article are in colour only in the electronic version)