The electromechanical coupling coefficient for surface acoustic waves propagating in GaN-on-sapphire structure has been evaluated using in situ measurements of the SAW attenuation during the evaporation of a metal film on the GaN surface. The extracted values for samples with GaN layer thicknesses of 2.2–2.4 μm were in the range of 0.06–0.09% at SAW frequencies of 200–300 MHz.
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Rimeika et al. (2002) studied this question.
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