The authors describe a Fabry-Perot technique for determining the reflectivity and the phase of the interface between a semiconductor and a multilayer metal structure as it will be realised in actual device fabrication. The reflection coefficients of GaAs to Ti/Au, Pd/Au, Au and Ag interfaces are measured at 1.55 µm.
No takes yet. Share an insight, caveat, or question.
Babić et al. (1996) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: