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Epitaxial layers of ZnO have been deposited by chemical vapor transport on single-crystal sapphire substrates. The ZnO layers have been deposited up to thicknesses of 100μ. X-ray analysis showed that the c axis of the ZnO could be made to lie parallel to the (0112)-oriented sapphire substrate. Resistivities were generally from 1 to 10 Ω-cm but could be significantly increased by diffusion of lithium or sodium.
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Galli et al. (1970) studied this question.
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