The effects of carbon doping on structural and electronic properties of amorphous Ge2Sb2Te5 are studied by using ab initio molecular dynamics simulations. In comparison with Si, N, and O dopants, C dopants are found to fundamentally alter the local order of amorphous network by increasing the population of tetrahedral Ge atoms significantly. In addition, the density of ABAB-type squared rings is much smaller than for the undoped case. The present results indicate that carbon dopants are very effective in extending covalent nature in amorphous Ge2Sb2Te5 and enhancing amorphous stability.
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Cho et al. (2011) studied this question.
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