We report here reflection- and transmission-mode photoemission out to 1.4 μm from a biased field-assisted p-InGaAsP grown on p-InP photocathode. The quantum yield in transmission is ∼0.1% from 0.9 to 1.4 μm. Dark current due to impact ionization by injected holes in the depletion region is observed.
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Escher et al. (1976) studied this question.
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