Low-resistivity ZnCdS films for use as windows in heterojunction solar cells

Low-resistivity ZnxCd1−xS films have been obtained by a multisource evaporation method. The films have been doped with In during the deposition. The resistivity of such films varies from 2×10−3 Ω cm for x=0 up to 2 Ω cm for x=0.3 and rises up to 1012 Ω cm for x=1. For energies lower than the energy gap, the transparency of these films, when corrected for the reflection loss, can reach a value of almost 100%. In the range of an x variation between 0 and 0.4 these films, because of their low resistivity and their high transparency, can be used as windows in heterojunction solar cells.