ZrO 2 thin films were grown by atomic layer deposition using alternate surface reactions of ZrI 4 and O 3 precursors in the temperature range of 250–400°C to the thickness in the range of 5–100 nm. The films were dense, continuous, and consisted of mixed monoclinic and metastable polymorphs with significant contribution from cubic ZrO 2 . The ZrO 2 films possessed permittivity up to 19. The capacitor structures based on these films also demonstrated tendency to resistive switching behavior. The ZrO 2 films exhibited saturative magnetization under external magnetic fields.
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Kukli et al. (2018) studied this question.
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