Recently, achieving flexible and highly efficient light‐emitting elements is the most noticeable demand for lighting or displays. Here, fully flexible gallium nitride (GaN) light‐emitting diodes (LEDs) are demonstrated based on a unique transfer method. The LED structure consisting of GaN pyramid arrays are first fabricated on an amorphous glass‐based template with a low‐temperature gallium nitride/titanium (LT‐GaN/Ti) hetero‐interface, then released and embedded into a flexible or stretchable substrate using a specialized interface control. Nanovoids created during thermal annealing render the hetero‐interface weaker than the other interfaces. This interface is further weakened by a post‐mechanical treatment for gentle release of the GaN pyramid arrays from the interface during a transfer process. The LEDs typically have a total thickness of }70 lm and exhibit stable surface‐emitting electroluminescence even at a bending radius of }2 mm with exceptionally high luminance values of 595 and 175 cd/m 2 at peak wavelengths of 514 and 483 nm, respectively. The results suggest a route to high brightness, large, flexible/stretchable blue or green lighting or displays.
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Choi et al. (2013) studied this question.