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High-quality Ga0.92In0.08N–GaN multiple quantum wells structures (MQW) were grown successfully by metalorganic vapor phase epitaxy. Fine multilayer structures with a thickness period of 7–9 nm were detected by secondary ion mass spectroscopy. The dislocation density in the MQW was found to be in the range of 0.5–2×109 cm−2 by transmission electron microscopy. The MQW extremely enhanced by two orders of magnitude, the cathodoluminescence intensity compared with bulk Ga0.91In0.09N.
Koike et al. (Mon,) studied this question.