Fundamental aspects of electron beam lithography. II. Low-voltage exposure of negative resists

A study has been made of the use of low-voltage exposure of negative resists for electron lithography. Three resists have been investigatd; an esterified terpolymer, epoxidized polybutadiene, and polyglycidyl methacrylate. The optimum exposure conditions have been determined for each material, and the use of a low accelerating voltage (5 kV) found to be advantageous. The application of this technique for the pattern delineation of silicon dioxide and tungsten is described.