A yellow-orange luminescence which peaks at 6030 Å at 300 °K has been observed in (Mg, O)-doped GaP and is attributed to a bound excitonic transition at a nearest-neighbor Mg–O complex. A photoluminescent efficiency at low temperatures of ∼20% has been measured and yellow diodes of external quantum efficiency ≃0.1% at 77 °K have been fabricated.
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Bhargava et al. (1972) studied this question.
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