Two clear resonance peaks for each bias direction accompanying negative differential resistance are observed in the Al0.3Ga0.7/GaAs/Al0.3Ga0.7As double-barrier diode of 24 to 26 monolayer well thickness. These two peaks are found to be the resonant tunnelling through the ground and first excited energy levels in the well.
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Nakagawa et al. (1986) studied this question.