Thermal emission rates of holes, activation energies, and annealing behavior of defects introduced in p-type silicon by 1.0 MeV electron irradiation were determined from dark junction capacitance and current transient measurements. Three donor levels are introduced at room temperature at 386,317, and 207 meV above the valence band. Donor levels at 328 and 260 meV are generated by heating at 170 and 225°C, respectively. Only the 386 meV levels survived 400°C heat treatment. These levels are independent of boron concentration and are from different defect centers.
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Walker et al. (1972) studied this question.
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