The effects of neutron irradiation on silicon carbide light-emitting diodes (LED's) have been studied over the temperature range 76–300°K. The results indicate that over the entire temperature range the radiative current in the low-voltage region is due to tunneling and subsequent radiative recombination in the depletion layer. Since this type of current is fairly radiation resistant, it is suggested that the SiC LED is an attractive device for operation in a neutron environment.
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C. E. Barnes (1972) studied this question.
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