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The VPE growth of GaAs using the single flat temperature zone (SFT) method with the GaAs (crust)–AsCl 3 –He–H 2 system is described. The growth in this system is kinetically limited and occurs selectively on the substrate. High-purity GaAs is obtained in the low AsCl 3 mole fraction range, and the AsCl 3 mole fraction effect is not observed in this system as it is in other SFT systems. It is concluded that the present system is the most promising of the four SFT systems.
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Koukitu et al. (1984) studied this question.
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