Distribution of gold in silicon wafers diffused with phosphorus was studied at different depths through electron-transmission microscopy and radio-tracer techniques. Phosphorus-gold precipitates were observed in the surface of the wafer in which gold was diffused from the other side. The distribution and precipitation of gold in the phosphorus-rich regions is shown to be consistent with the Reiss theory of solubility of impurities in doped semiconductors.
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Joshi et al. (1966) studied this question.
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