Free-carrier capture cross sections of isolated iron and chromium centers in ZnS are estimated. It is found that the Fe and Cr electron capture cross sections are comparable to those for shallow donors active in photoluminescence processes. The cross sections for hole capture are up to 103 times larger than those for the main ZnS acceptors. Our results allow us to explain the photoluminescence quantum yield of ZnS:Cu,Fe.
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Żakrzewski et al. (1990) studied this question.
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