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Electrical resistivity measurements are used to study damage in CrSi2 thin films induced by Ne, Ar, or Xe ion irradiation over a fluence range of 1010–1015 ions cm−2. Irradiation produces a factor of 5–12 increase in film conductivity at the higher fluences. The influence of defect generation and recombination is evident. We speculate that formation of a compound defect is a dominant factor enhancing film conductivity. A temperature dependence at low fluences is reported and tentatively identified.
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Banwell et al. (1986) studied this question.
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