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The interface formation between ferroelectric HfO 2 layers and TiN bottom electrodes was studied by hard X-ray photoelectron spectroscopy and directly correlated to the electric polarization characteristics of the TiN/HfO 2 /TiN capacitors. We consistently deduced the interface chemistry from HfO 2 - and TiN-related core levels, dependent on the oxygen flow ṁ supplied before and during physical vapor deposition (PVD) growth of HfO 2 . The results underline the critical, twofold impact of oxygen supply on HfO 2 and interface properties. When supplied before growth, the supplied oxygen stabilizes the TiN/HfO 2 interface by oxidation and formation of a self-limiting (noninsulating) TiO 2 intralayer. When supplied during growth, on the other hand, oxygen flows above a critical threshold reduce the oxygen vacancy concentration within the HfO 2 film. We reveal a direct relation between the maximum ferroelectric remanent polarization and a critical threshold PVD oxygen exposure flow rate. The results allow for advancement of the PVD growth process in terms of a more flexible design of the ferroelectric HfO 2 films with chemically stable TiN interfaces.
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Szyjka et al. (2020) studied this question.
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