Synthesis and photovoltaic properties of a low‐band‐gap polymer consisting of alternating thiophene and benzothiadiazole derivatives for bulk‐heterojunction and dye‐sensitized solar cells

We synthesized a novel low‐band‐gap, conjugated polymer, poly[4,7‐bis(3′,3′‐diheptyl‐3,4‐propylenedioxythienyl)‐2,1,3‐benzothiadiazole] [poly(heptyl 4 ‐PTBT)], consisting of alternating electron‐rich, diheptyl‐substituted propylene dioxythiophene and electron‐deficient 2,1,3‐benzothiadiazole units, and its photovoltaic properties were investigated. A thin film of poly(heptyl 4 ‐PTBT) exhibited an optical band gap of 1.55 eV. A bulk‐heterojunction solar cell with indium tin oxide/poly(3,4‐ethylenedioxythiophene)/poly(heptyl 4 ‐PTBT): methanofullerene [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) (1:4)/LiF/Al was fabricated with poly(heptyl 4 ‐PTBT) as an electron donor and PCBM as an electron acceptor and showed an open‐circuit voltage, short‐circuit current density, and power conversion efficiency of 0.37 V, 3.15 mA/cm 2 , and 0.35% under air mass 1.5 (AM1.5G) illumination (100 mW/cm 2 ), respectively. A solid‐state, dye‐sensitized solar cell with a SnO 2 :F/TiO 2 /N3 dye/poly(heptyl 4 ‐PTBT)/Pt device was fabricated with poly(heptyl 4 ‐PTBT) as a hole‐transport material. This device exhibited a high power conversion efficiency of 3.1%, which is the highest power conversion efficiency value with hole‐transport materials in dye‐sensitized solar cells to date.