The high demand for 1.3–1.55 µm lasers has led to the investigation of GaInNAsSb/GaNAsSb on GaAs. In-plane lasers operating out to 1.49 µm, with threshold current density of 930 A/cm2 per quantum well and pulsed power up to 70 mW, are presented. In addition, photoluminescence out to 1.6 µm from GaInNAsSb quantum wells was observed.
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Ha et al. (2002) studied this question.
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