Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFET's

This is the authors' abstract. We don't add key points for this paper.

We derived a simple formula for the subthreshold swing S in double-gate (DG) SOI MOSFET's. Our formula, which depends only on a scaling device parameter, matches the device simulation results. From these results, our equations are simple and give a scaling rule for DG-SOI MOSFET's.>