Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

In this work, the supercritical CO2 fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (SiOx) film at 150°C. After the proposed treatment, the SiOx film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 102 times and the retention time attains to 2×103s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps.