Titanium silicide films prepared by reactive sputtering

Thin films of titanium silicides were deposited by means of reactive sputtering of titanium in an atmosphere of argon containing silane. The overall compositions of the films were determined by Rutherford backscattering which also indicates the presence of included argon. Hydrogen and oxygen were determined by other analytical techniques. The crystallization of the films during heat treatment was determined by x-ray diffraction which also allows the determination of the different phases present. Resistivities of about 20 μΩ cm observed in films annealed at 800 °C agree well with values previously reported for TiSi2 films prepared by other means. During heat treatment metal-rich layers deposited on silicon equilibrate with their substrate to form stoichiometric TiSi2, the rejection of silicon out of silicon-rich layers is greatly more difficult.