Dependence of spin-pumping spin Hall effect measurements on layer thicknesses and stacking order

Voltages generated from inverse spin Hall and anisotropic magnetoresistance effects via spin pumping in ferromagnetic (F)/nonmagnetic (N) bilayers are investigated by means of a broadband ferromagnetic resonance approach. Varying the nonmagnetic layer thickness enables the determination of the spin diffusion length in Pd of 5.5 ±{} 0.5 nm. We also observe a systematic change of the voltage line shape when reversing the stacking order of the F/N bilayer, which is qualitatively consistent with expectations from spin Hall effects. However, even after independent calibration of the precession angle, systematic quantitative discrepancies in analyzing the data with spin Hall effects remain.