Temperature dependence of the switching field and its distribution function in Fe-based bistable microwires

The switching field distribution for magnetization reversal in a single Barkhausen jump of a bistable Fe-based amorphous microwire as well as its temperature dependence have been investigated in the temperature range from 77 to 450 K. Two processes have been identified to be responsible for the temperature dependence of the switching field: magnetostrictive volume domain wall pinning on stresses and relaxation effects due to local structural rearrangements. While at low temperatures, pinning on the atomic level defects plays the dominant role, magnetostrictive pinning becomes more important at intermediate temperatures. A simple model is proposed considering both energy contributions that fits reasonably well with experimental data and allows us to interpret additionally the observed temperature dependence of the switching field fluctuations.