A series of amorphous Fe/sub x/Ni/sub 80-x/B/sub 15/Si/sub 5/ thin films have been deposited by ion beam sputtering. Beam parameters used during deposition were chosen to be those which produced the highest quality Fe/sub 40/Ni/sub 40/B/sub 15/Si/sub 5/ film, as determined by the film magnetic properties. The films were characterized by reflection-electron-diffraction, resistivity, vibrating-sample-magnetometer, ferromagnetic-resonance (FMR), and frequency-swept zero-field-resonance measurements. The samples are found to be magnetically active, with no biasing external field, under 1 GHz. The small FMR linewidths, high resistivity, and large saturation magnetization show that these alloys may be applicable in thin-film microwave devices.>
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Oliver et al. (1989) studied this question.
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